Structure tuning of line-defect waveguides based on silicon-on-insulator photonic crystal slabs
文献类型：期刊论文
| 作者 | Wang CX (Wang Chun-Xia) ; Xu XS (Xu Xing-Sheng) ; Xiong GG (Xiong Gui-Guang) ; Hu HY (Hu Hai-Yang) ; Song Q (Song Qian) ; Du W (Du Wei) ; Chen HD (Chen Hong-Da) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:3页码:738-740 |
| 关键词 | LIGHT |
| ISSN号 | issn: 0256-307x |
| 通讯作者 | wang, cx, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: cxwang@red.semi.ac.cn |
| 中文摘要 | we present fabrication and experimental measurement of a series of photonic crystal waveguides. the complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-hole single-line-defect waveguide with lattice constant from 410nm to 470nm and normalized radius 0.31. we fabricate these devices on a siliconon-insulator substrate and characterize them using a tunable laser source over a wavelength range from 1510nm to 1640nm. a sharp attenuation at photonic crystal waveguide mode edge is observed for most structures. the edge of guided band is shifted about 30nm with the 10nm increase of the lattice constant. we obtain high-efficiency light propagation and broad flat spectrum response of the photonic crystal waveguides. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9618]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang CX ,Xu XS ,Xiong GG ,et al. Structure tuning of line-defect waveguides based on silicon-on-insulator photonic crystal slabs[J]. chinese physics letters,2007,24(3):738-740. |
| APA | Wang CX .,Xu XS .,Xiong GG .,Hu HY .,Song Q .,...&Chen HD .(2007).Structure tuning of line-defect waveguides based on silicon-on-insulator photonic crystal slabs.chinese physics letters,24(3),738-740. |
| MLA | Wang CX ,et al."Structure tuning of line-defect waveguides based on silicon-on-insulator photonic crystal slabs".chinese physics letters 24.3(2007):738-740. |
入库方式： OAI收割
来源：半导体研究所
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