Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE
文献类型：期刊论文
| 作者 | Wei TB (Wei Tong-Bo) ; Ma P (Ma Ping) ; Duan RF (Duan Rui-Fei) ; Wang JX (Wang Jun-Xi) ; Li JM (Li Jin-Min) ; Zeng YP (Zeng Yi-Ping) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:3页码:822-824 |
| 关键词 | VAPOR-PHASE EPITAXY |
| ISSN号 | issn: 0256-307x |
| 通讯作者 | wei, tb, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: tbwei@semi.ac.cn |
| 中文摘要 | thick gan films with high quality are directly grown on sapphire in a home-built vertical hydride vapour phase epitaxy (hvpe) reactor. the optical and structural properties of large scale columnar do-mains near the interface are studied using cathodoluminescence and micro-raman scattering. these columnar do-mains show a strong emission intensity due to extremely high free carrier concentration up to 2 x 10(19) cm(-3), which are related with impurities trapped in structural defects. the compressive stress in gan elm clearly decreases with increasing distance from interface. the quasi-continuous columnar domains play an important role in the stress relaxation for the upper high quality layer. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9626]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei TB ,Ma P ,Duan RF ,et al. Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE[J]. chinese physics letters,2007,24(3):822-824. |
| APA | Wei TB ,Ma P ,Duan RF ,Wang JX ,Li JM ,&Zeng YP .(2007).Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE.chinese physics letters,24(3),822-824. |
| MLA | Wei TB ,et al."Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE".chinese physics letters 24.3(2007):822-824. |
入库方式： OAI收割
来源：半导体研究所
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