Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation
文献类型:期刊论文
作者 | Zhang JG ; Wang XX ; Cheng BW ; Yu JZ ; Wang QM ; Hau J ; Ding L ; Ge WK |
刊名 | applied physics letters
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出版日期 | 2007 |
卷号 | 90期号:8页码:art.no.081101 |
关键词 | DOPED CRYSTALLINE SILICON |
ISSN号 | issn: 0003-6951 |
通讯作者 | zhang, jg, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: jianguochang@yahoo.com |
中文摘要 | enhanced near-infrared photoluminescence (pl) from sulfur-related isoelectronic luminescent centers in silicon was observed from thermally quenched sulfur-implanted silicon in which additional copper or silver ions had been coimplanted. the pl from the sulfur and copper coimplanted silicon peaked between 70 and 100 k and persisted to 260 k. this result strongly supports the original conjecture from the optical detection of magnetic resonance studies that the strong pl from sulfur-doped silicon comes from s-cu isoelectronic complexes [frens , phys. rev. b 46, 12316 (1992); mason , ibid. 58, 7007 (1998).]. (c) 2007 american institute of physics. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-29 |
源URL | [http://ir.semi.ac.cn/handle/172111/9628] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zhang JG,Wang XX,Cheng BW,et al. Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation[J]. applied physics letters,2007,90(8):art.no.081101. |
APA | Zhang JG.,Wang XX.,Cheng BW.,Yu JZ.,Wang QM.,...&Ge WK.(2007).Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation.applied physics letters,90(8),art.no.081101. |
MLA | Zhang JG,et al."Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation".applied physics letters 90.8(2007):art.no.081101. |
入库方式: OAI收割
来源:半导体研究所
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