Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation
文献类型：期刊论文
| 作者 | Zhang JG ; Wang XX ; Cheng BW ; Yu JZ ; Wang QM ; Hau J ; Ding L ; Ge WK |
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:8页码:art.no.081101 |
| 关键词 | DOPED CRYSTALLINE SILICON |
| ISSN号 | issn: 0003-6951 |
| 通讯作者 | zhang, jg, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: jianguochang@yahoo.com |
| 中文摘要 | enhanced near-infrared photoluminescence (pl) from sulfur-related isoelectronic luminescent centers in silicon was observed from thermally quenched sulfur-implanted silicon in which additional copper or silver ions had been coimplanted. the pl from the sulfur and copper coimplanted silicon peaked between 70 and 100 k and persisted to 260 k. this result strongly supports the original conjecture from the optical detection of magnetic resonance studies that the strong pl from sulfur-doped silicon comes from s-cu isoelectronic complexes [frens , phys. rev. b 46, 12316 (1992); mason , ibid. 58, 7007 (1998).]. (c) 2007 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9628]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang JG,Wang XX,Cheng BW,et al. Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation[J]. applied physics letters,2007,90(8):art.no.081101. |
| APA | Zhang JG.,Wang XX.,Cheng BW.,Yu JZ.,Wang QM.,...&Ge WK.(2007).Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation.applied physics letters,90(8),art.no.081101. |
| MLA | Zhang JG,et al."Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation".applied physics letters 90.8(2007):art.no.081101. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。