Exciton spin splitting in ultrathin InAs layers
文献类型：期刊论文
| 作者 | Sun, Z (Sun, Zheng) ; Xu, ZY (Xu, Z. Y.) ; Ji, Y (Ji, Yang) ; Sun, BQ (Sun, B. Q.) ; Wang, BR (Wang, B. R.) ; Huang, SS (Huang, S. S.) ; Ni, HQ (Ni, H. Q.) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:7页码:art.no.071907 |
| 关键词 | GAAS QUANTUM-WELLS |
| ISSN号 | issn: 0003-6951 |
| 通讯作者 | sun, z, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: zyxu@red.semi.ac.cn |
| 中文摘要 | unique spin splitting behaviors in ultrathin inas layers, which show very different spin splitting characteristics between the inas monolayer (ml) and submonolayer (sml) have been observed. while distinct spin splitting is observed in an inas ml, no visible spin splitting is found in a 1/3 ml inas sml. in addition, the spin relaxation time in the 1/3 ml inas is found to be much longer than that in the 1 ml sample. these results are in good agreement with the theoretical prediction that the interexcitonic exchange interaction plays a dominant role in energy splitting, while the intraexciton exchange interaction controls the spin relaxation. (c) 2007 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9630]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun, Z ,Xu, ZY ,Ji, Y ,et al. Exciton spin splitting in ultrathin InAs layers[J]. applied physics letters,2007,90(7):art.no.071907. |
| APA | Sun, Z .,Xu, ZY .,Ji, Y .,Sun, BQ .,Wang, BR .,...&Ni, HQ .(2007).Exciton spin splitting in ultrathin InAs layers.applied physics letters,90(7),art.no.071907. |
| MLA | Sun, Z ,et al."Exciton spin splitting in ultrathin InAs layers".applied physics letters 90.7(2007):art.no.071907. |
入库方式： OAI收割
来源：半导体研究所
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