A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors
文献类型：期刊论文
| 作者 | Hu, WG (Hu Wei-Guo) ; Liu, XL (Liu Xiang-Lin) ; Zhang, PF (Zhang Pan-Feng) ; Zhao, FA (Zhao Feng-Ai) ; Jiao, CM (Jiao Chun-Mei) ; Wei, HY (Wei Hong-Yuan) ; Zhang, RQ (Zhang Ri-Qing) ; Wu, JJ (Wu Jie-Jun) ; Cong, GW (Cong Guang-Wei) ; Pan, Y (Pan Yi) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:2页码:516-518 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION |
| ISSN号 | issn: 0256-307x |
| 通讯作者 | hu, wg, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: sivamay@semi.ac.cn |
| 中文摘要 | aluminium nitride (aln) films grown with dimethylethylamine alane (dmeaa) are compared with the ones grown with trimethylaluminium (tma). in the high-resolution x-ray diffraction omega scans, the full width at half maximum (fwhm) of (0002) aln films grown with dmeaa is about 0.70 deg, while the fwhm of (0002) aln films grown with tma is only 0.11 deg. the surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. the rms roughness of aln films grown with dmeaa is 47.4 nm, and grown with tma is 69.4 nn. although using dmeaa as the aluminium precursor cannot improve the aln crystal quality, aln growth can be reached at low temperature of 673 k. thus, dmeaa is an alternative aluminium precursor to deposit aln film at low growth temperatures. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9648]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hu, WG ,Liu, XL ,Zhang, PF ,et al. A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors[J]. chinese physics letters,2007,24(2):516-518. |
| APA | Hu, WG .,Liu, XL .,Zhang, PF .,Zhao, FA .,Jiao, CM .,...&Pan, Y .(2007).A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors.chinese physics letters,24(2),516-518. |
| MLA | Hu, WG ,et al."A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors".chinese physics letters 24.2(2007):516-518. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。