Unusual carrier thermalization in a dilute GaAs1-xNx alloy
文献类型：期刊论文
| 作者 | Tan PH
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:6页码:art.no.061905 |
| 关键词 | PHOTOLUMINESCENCE |
| ISSN号 | issn: 0003-6951 |
| 通讯作者 | tan, ph, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: pt290@cam.ac.uk ; yong_zhang@nrel.gov |
| 中文摘要 | photoluminescence (pl) properties of the e-0, e-0+delta(0), and e+ bands in an x=0.62% gaas1-xnx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-pl. the hot electrons within the e+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its pl peak energy by >2k(b)t, suggesting peculiar density of states and carrier dynamics of the e+ band. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9652]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tan PH. Unusual carrier thermalization in a dilute GaAs1-xNx alloy[J]. applied physics letters,2007,90(6):art.no.061905. |
| APA | Tan PH.(2007).Unusual carrier thermalization in a dilute GaAs1-xNx alloy.applied physics letters,90(6),art.no.061905. |
| MLA | Tan PH."Unusual carrier thermalization in a dilute GaAs1-xNx alloy".applied physics letters 90.6(2007):art.no.061905. |
入库方式： OAI收割
来源：半导体研究所
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