中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Systematic considerations for the patterning of photonic crystal devices by electron beam lithography

文献类型:期刊论文

作者Yu HJ (Yu Hejun) ; Yu JZ (Yu Jinzhong) ; Sun F (Sun Fei) ; Li ZY (Li Zhiyong) ; Chen SW (Chen Shaowu)
刊名optics communications
出版日期2007
卷号271期号:1页码:241-247
ISSN号issn: 0030-4018
关键词photonic crystal
通讯作者yu, hj, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: yhjun@red.semi.ac.cn
中文摘要photonic crystal devices with feature sizes of a few hundred nanometers are often fabricated by electron beam lithography. the proximity effect, stitching error and resist profiles have significant influence on the pattern quality, and therefore determine the optical properties of the devices. in this paper, detailed analyses and simple solutions to these problems are presented. the proximity effect is corrected by the introduction of a compensating dose. the influence of the stitching error is alleviated by replacing the original access waveguides with taper-added waveguides, and the taper parameters are also discussed to get the optimal choice. it is demonstrated experimentally that patterns exposed with different doses have almost the same edge-profiles in the resist for the same development time, and that optimized etching conditions can improve the wall angle of the holes in the substrate remarkably. (c) 2006 elsevier b.v. all rights reserved.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-29
源URL[http://ir.semi.ac.cn/handle/172111/9662]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Yu HJ ,Yu JZ ,Sun F ,et al. Systematic considerations for the patterning of photonic crystal devices by electron beam lithography[J]. optics communications,2007,271(1):241-247.
APA Yu HJ ,Yu JZ ,Sun F ,Li ZY ,&Chen SW .(2007).Systematic considerations for the patterning of photonic crystal devices by electron beam lithography.optics communications,271(1),241-247.
MLA Yu HJ ,et al."Systematic considerations for the patterning of photonic crystal devices by electron beam lithography".optics communications 271.1(2007):241-247.

入库方式: OAI收割

来源:半导体研究所

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