Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering
文献类型：期刊论文
| 作者 | Xin, P (Xin Ping) ; Sun, CW (Sun Cheng-Wei) ; Qin, FW (Qin Fu-Wen) ; Wen, SP (Wen Sheng-Ping) ; Zhang, QY (Zhang Qing-Yu) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:2页码:1082-1087 |
| 关键词 | ZnO/MgO |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | zhang, qy, dalian univ technol, state key lab mat modificat laser ion & elect bea, dalian 116024, peoples r china. 电子邮箱地址: qyzhang@dlut.edu.cn |
| 中文摘要 | wurtzite zno/mgo superlattices were successfully grown on si (001) substrates at 750 degrees c using radio-frequency reactive magnetron sputtering method. x-ray reflection and diffraction, electronic probe and photoluminescence analysis were used to characterize the multiple quantum wells (mqws). the results showed the periodic layer thickness of the mqws to be 1.85 to 22.3 nm. the blueshift induced by quantum confinement was observed. least square fitting method was used to deduce the zero phonon energy of the exciton from the room-temperature photoluminescence. it was found that the mgo barrier layers has a much larger offset than znmgo. the fluctuation of periodic layer thickness of the mqws was suggested to be a possible reason causing the photoluminescence spectrum broadening. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9680]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xin, P ,Sun, CW ,Qin, FW ,et al. Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering[J]. acta physica sinica,2007,56(2):1082-1087. |
| APA | Xin, P ,Sun, CW ,Qin, FW ,Wen, SP ,&Zhang, QY .(2007).Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering.acta physica sinica,56(2),1082-1087. |
| MLA | Xin, P ,et al."Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering".acta physica sinica 56.2(2007):1082-1087. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。