Influence of deep level defects on electrical compensation in semi-insulating InP materials
文献类型：期刊论文
| 作者 | Yang, J (Yang Jun) ; Zhao, YW (Zhao You-Wen) ; Dong, ZY (Dong Zhi-Yuan) ; Deng, AH (Deng Ai-Hong) ; Miao, SS (Miao Shan-Shan) ; Wang, B (Wang Bo) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:2页码:1167-1171 |
| 关键词 | InP |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | zhao, yw, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: zhaoyw@red.semi.ac.cn |
| 中文摘要 | in this paper, we analyze and compare electrical compensation and deep level defects in semi-insulating ( si) materials prepared by fe-doping and high temperature annealing of undoped inp. influence of deep level defects in the si-inp materials on the electrical compensation has been studied thermally stimulated current spectroscopy (tsc). electrical property of the fe-doped si-inp is deteriorated due to involvement of a high concentration of deep level defects in the compensation. in contrast, the concentration of deep defects is very low in high temperature annealed undoped si-inp in which fe acceptors formed by diffusion act as the only compensation centre to pin the fermi level, resulting in excellent electrical performance. a more comprehensive electrical compensation model of si-inp has been given based on the research results. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9682]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang, J ,Zhao, YW ,Dong, ZY ,et al. Influence of deep level defects on electrical compensation in semi-insulating InP materials[J]. acta physica sinica,2007,56(2):1167-1171. |
| APA | Yang, J ,Zhao, YW ,Dong, ZY ,Deng, AH ,Miao, SS ,&Wang, B .(2007).Influence of deep level defects on electrical compensation in semi-insulating InP materials.acta physica sinica,56(2),1167-1171. |
| MLA | Yang, J ,et al."Influence of deep level defects on electrical compensation in semi-insulating InP materials".acta physica sinica 56.2(2007):1167-1171. |
入库方式： OAI收割
来源：半导体研究所
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