Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD
文献类型：期刊论文
| 作者 | Jahn U (Jahn Uwe) ; Jiang DS (Jiang De-Sheng) ; Ploog KH (Ploog Klaus H.) ; Wang XL (Wang Xiaolan) ; Zhao DG (Zha0 Degang) ; Yang H (Yang, Hui) |
| 刊名 | physica status solidi a-applications and materials science
 |
| 出版日期 | 2007 |
| 卷号 | 204期号:1页码:294-298 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION |
| ISSN号 | issn: 0031-8965 |
| 通讯作者 | jahn, u, paul drude inst festkorperelekt, hausvogteipl 5-7, d-10117 berlin, germany. 电子邮箱地址: ujahn@pdi-berlin.de |
| 中文摘要 | for both, (al,ga)n with low al content grown on a gan nucleation layer and (ai,ga)n with high al content gown on an aln nucleation layer, the inhomogeneous distribution of the luminescence is linked to the distribution of defects, which may be due to inversion domains. in the former system, defect regions exhibit a much lower al content than the nominal one leading to a splitting of the respective luminescence spectra. in the latter system, a domain-like growth is observed with a pyramidal surface morphology and non-radiative recombination within the domain boundaries. (c) 2007 wileynch verlag gmbh & co. kgaa, weinheim. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9684]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jahn U ,Jiang DS ,Ploog KH ,et al. Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD[J]. physica status solidi a-applications and materials science,2007,204(1):294-298. |
| APA | Jahn U ,Jiang DS ,Ploog KH ,Wang XL ,Zhao DG ,&Yang H .(2007).Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD.physica status solidi a-applications and materials science,204(1),294-298. |
| MLA | Jahn U ,et al."Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD".physica status solidi a-applications and materials science 204.1(2007):294-298. |
入库方式： OAI收割
来源：半导体研究所
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