Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111)
文献类型：期刊论文
| 作者 | Wu JJ (Wu Jiejun) ; Zhang GY (Zhang Guoyi) ; Liu XL (Liu Xianglin) ; Zhu QS (Zhu Qinsheng) ; Wang ZG (Wang Zhanguo) ; Jia QJ (Jia Quanjie) ; Guo LP (Guo Liping) |
| 刊名 | nanotechnology
 |
| 出版日期 | 2007 |
| 卷号 | 18期号:1页码:art.no.015402 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION |
| ISSN号 | issn: 0957-4484 |
| 通讯作者 | wu, jj, peking univ, res ctr wide gap semicond, state key lab artificial microstruct & mesoscop, sch phys, beijing 100871, peoples r china. 电子邮箱地址: jiejunw@red.semi.ac.cn |
| 中文摘要 | low indium content ingan/algan multiple quantum wells (mqws) have been grown on si(111) substrate by metal-organic chemical vapour deposition (mocvd). a new method of using an isoelectronic indium-doped algan barrier has been found to be very effective in improving the crystalline quality and interfacial abruptness of ingan quantum well layers. we grew five periods of in0.06ga0.94n/al0.20ga0.80n:in mqws with in-doped barrier layers and obtained strong near-ultraviolet (uv) emission (similar to 400 nm) at room temperature. an in-doped algan barrier improves the room-temperature pl intensity of ingan/algan mqws, making it a candidate barrier for a near-uv source on si substrate. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9688]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wu JJ ,Zhang GY ,Liu XL ,et al. Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111)[J]. nanotechnology,2007,18(1):art.no.015402. |
| APA | Wu JJ .,Zhang GY .,Liu XL .,Zhu QS .,Wang ZG .,...&Guo LP .(2007).Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111).nanotechnology,18(1),art.no.015402. |
| MLA | Wu JJ ,et al."Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111)".nanotechnology 18.1(2007):art.no.015402. |
入库方式： OAI收割
来源：半导体研究所
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