Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Wang H; Wang YT ; Wang LL; Yang H; Wang H; Zhu JJ; Yang H; Jiang DS
|
| 刊名 | materials letters
 |
| 出版日期 | 2007 |
| 卷号 | 61期号:2页码:516-519 |
| 关键词 | X-ray diffraction |
| ISSN号 | issn: 0167-577x |
| 通讯作者 | wang, h, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wangh@red.semi.ac.cn |
| 中文摘要 | rutherford backscattering and channeling is combined with x-ray diffraction to study the depth dependence of crystalline quality in inn layers grown by metalorganic chemical vapor deposition on sapphire substrate. the poorest crystalline quality in inn layer is produced at the intermediate region over 100 nm away from the inn/sapphire interface. with increasing layer thickness the crystalline quality improves to a certain degree dependent on the growth temperature. the inn sample grown at 450 degrees c is found to be more homogeneous than the sample grown at 550 degrees c. the difference in the defect profile is explained by the temperature-dependent growth modes. the inhomogeneity of structural quality and related properties such as carrier concentration and strain field is possibly the reason to observe a high energy wing in pl spectrum of the inn sample grown at 550 degrees c. (c) 2006 elsevier b.v all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9708]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang H,Wang YT,Wang LL,et al. Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition[J]. materials letters,2007,61(2):516-519. |
| APA | Wang H.,Wang YT.,Wang LL.,Yang H.,Wang H.,...&Jiang DS.(2007).Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition.materials letters,61(2),516-519. |
| MLA | Wang H,et al."Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition".materials letters 61.2(2007):516-519. |
入库方式： OAI收割
来源：半导体研究所
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