Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhao, DG (Zhao, D. G.) ; Liu, ZS (Liu, Z. S.) ; Zhu, JJ (Zhu, J. J.) ; Zhang, SM (Zhang, S. M.) ; Jiang, DS (Jiang, D. S.) ; Yang, H (Yang, Hui) ; Liang, JW (Liang, J. W.) ; Li, XY (Li, X. Y.) ; Gong, HM (Gong, H. M.) |
| 刊名 | applied surface science
 |
| 出版日期 | 2006 |
| 卷号 | 253期号:5页码:2452-2455 |
| ISSN号 | issn: 0169-4332 |
| 关键词 | Al incorporation |
| 通讯作者 | zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn |
| 中文摘要 | the effect of al incorporation on the algan growth by metalorganic chemical vapor deposition is investigated. with the increase of trimethylalluminum (tmal) flux, the crystal quality becomes worse, and the epilayer surface becomes rougher. an interesting phenomenon is that the growth rate of algan decrease with increasing tmal flux, which is opposite to the aln growth rate dependence on the tmal flux. all these effects are attributed to the different properties of at atoms due to the higher bond strength of al-n compared with ga-n, which lead to lower surface mobility and stronger competitive ability of al atoms during the growth. the enhancement of the surface mobility of al is especially important for improving the quality of algan. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9712]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao, DG ,Liu, ZS ,Zhu, JJ ,et al. Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition[J]. applied surface science,2006,253(5):2452-2455. |
| APA | Zhao, DG .,Liu, ZS .,Zhu, JJ .,Zhang, SM .,Jiang, DS .,...&Gong, HM .(2006).Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition.applied surface science,253(5),2452-2455. |
| MLA | Zhao, DG ,et al."Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition".applied surface science 253.5(2006):2452-2455. |
入库方式： OAI收割
来源：半导体研究所
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