Chemical composition and elastic strain in AlInGaN quaternary films
文献类型：期刊论文
| 作者 | Zhou, SQ (Zhou, Shengqiang) ; Wu, MF (Wu, M. F.) ; Yao, SD (Yao, S. D.) ; Liu, JP (Liu, J. P.) ; Yang, H (Yang, H.) |
| 刊名 | thin solid films
 |
| 出版日期 | 2006 |
| 卷号 | 515期号:4页码:1429-1432 |
| ISSN号 | issn: 0040-6090 |
| 关键词 | Rutherford backscattering spectroscopy |
| 通讯作者 | zhou, sq, peking univ, sch phys, beijing 100871, peoples r china. 电子邮箱地址: s.zhou@fz-rossendorf.de |
| 中文摘要 | high-quality alingan quaternary layers were grown on c-al2o3 using a thick gan template. a full width at half maximum of 0.075 degrees from alingan(0004) rocking curve and a minimum yield of 5.6% from rutherford backscattering/channelling spectrometry (rbs) prove the alingan layer of a comparable crystalline quality with gan layers. the chemical compositions (both of al and in contents) of alingan layers are directly obtained from rbs and elastic recoil detection analysis. the lattice parameters both in perpendicular and parallel directions are deduced from x-ray diffraction. the alingan layer is found to process a compressive strain in parallel direction and a tensile strain in perpendicular direction. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9718]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou, SQ ,Wu, MF ,Yao, SD ,et al. Chemical composition and elastic strain in AlInGaN quaternary films[J]. thin solid films,2006,515(4):1429-1432. |
| APA | Zhou, SQ ,Wu, MF ,Yao, SD ,Liu, JP ,&Yang, H .(2006).Chemical composition and elastic strain in AlInGaN quaternary films.thin solid films,515(4),1429-1432. |
| MLA | Zhou, SQ ,et al."Chemical composition and elastic strain in AlInGaN quaternary films".thin solid films 515.4(2006):1429-1432. |
入库方式： OAI收割
来源：半导体研究所
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