mc-Si : H/c-Si solar cell prepared by PECVD
文献类型：期刊论文
| 作者 | Xu, Y (Xu Ying) ; Liao, XB (Liao Xianbo) ; Diao, HW (Diao Hongwei) ; Li, XD (Li Xudong) ; Zeng, XB (Zeng Xiangbo) ; Liu, XP (Liu Xiaoping) ; Wang, MH (Wang Minhua) ; Wang, WJ (Wang Wenjing) |
| 刊名 | rare metals
 |
| 出版日期 | 2006 |
| 卷号 | 25期号:0页码:176-179 |
| 关键词 | solar cell |
| ISSN号 | issn: 1001-0521 |
| 通讯作者 | xu, y, chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china. 电子邮箱地址: yingxu@red.semi.ac.cn |
| 中文摘要 | hetero-junction solar cells with an me-si: h window layer were achieved. the open voltage is increased while short current is decreased with increasing the mc-si:h layer's thickness of emitter layer. the highest of v-oc of 597 mv has obtained. when fixed the thickness of 30 nm, changing the n type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. although the hydrogen etching before deposition enables the c-si substrates to become rough by afm images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. the best result of efficiency is 13.86% with the v-oc of 549.8 mv, j(sc) of 32.19 ma center dot cm(-2) and the cell's area of 1 cm(2). |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9732]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu, Y ,Liao, XB ,Diao, HW ,et al. mc-Si : H/c-Si solar cell prepared by PECVD[J]. rare metals,2006,25(0):176-179. |
| APA | Xu, Y .,Liao, XB .,Diao, HW .,Li, XD .,Zeng, XB .,...&Wang, WJ .(2006).mc-Si : H/c-Si solar cell prepared by PECVD.rare metals,25(0),176-179. |
| MLA | Xu, Y ,et al."mc-Si : H/c-Si solar cell prepared by PECVD".rare metals 25.0(2006):176-179. |
入库方式： OAI收割
来源：半导体研究所
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