Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length
文献类型：期刊论文
| 作者 | Wang, YJ (Wang, Y. J.) ; Xu, SJ (Xu, S. J.) ; Zhao, DG (Zhao, D. G.) ; Zhu, JJ (Zhu, J. J.) ; Yang, H (Yang, H.) ; Shan, XD (Shan, X. D.) ; Yu, DP (Yu, D. P.) |
| 刊名 | optics express
 |
| 出版日期 | 2006 |
| 卷号 | 14期号:26页码:13151-13157 |
| 关键词 | TIME-RESOLVED PHOTOLUMINESCENCE |
| ISSN号 | issn: 1094-4087 |
| 通讯作者 | wang, yj, univ hong kong, dept phys, pokfulam rd, hong kong, hong kong, peoples r china. 电子邮箱地址: sjxu@hkucc.hku.hk |
| 中文摘要 | in this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered ingan/gan quantum wells. the luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics. (c) 2006 optical society of america. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9734]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, YJ ,Xu, SJ ,Zhao, DG ,et al. Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length[J]. optics express,2006,14(26):13151-13157. |
| APA | Wang, YJ .,Xu, SJ .,Zhao, DG .,Zhu, JJ .,Yang, H .,...&Yu, DP .(2006).Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length.optics express,14(26),13151-13157. |
| MLA | Wang, YJ ,et al."Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length".optics express 14.26(2006):13151-13157. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。