Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE
文献类型：期刊论文
| 作者 | Ding Y (Ding Ying) ; Zhou F (Zhou Fan) ; Chen WX (Chen Wei-xi) ; Wang W (Wang Wei) |
| 刊名 | journal of luminescence
 |
| 出版日期 | 2007 |
| 卷号 | 122 sp.iss.si期号:0页码:176-178 |
| 关键词 | buried heterostructure (BH) |
| ISSN号 | issn: 0022-2313 |
| 通讯作者 | ding, y, hokkaido univ, res ctr integrated quantum elect, kita ku, n13,w8, sapporo, hokkaido 0608628, japan. 电子邮箱地址: yingding@red.semi.ac.cn |
| 中文摘要 | a novel unselective regrowth buried heterostructure (bh) long-wavelength superluminescent diode (sld), which has a grade-strained bulk ingaas active region, was developed by metalorganic vapor-phase epitaxy (movpe). the 3 db emission spectrum bandwidth of the sld is about 65 nm with the range from 1596 to 1661 nm at 90 ma and front 1585 to 1650 nm at 150 ma. an output power of 3.5 mw is obtained at 200 ma injection current under cw operation at room temperature. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9740]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ding Y ,Zhou F ,Chen WX ,et al. Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE[J]. journal of luminescence,2007,122 sp.iss.si(0):176-178. |
| APA | Ding Y ,Zhou F ,Chen WX ,&Wang W .(2007).Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE.journal of luminescence,122 sp.iss.si(0),176-178. |
| MLA | Ding Y ,et al."Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE".journal of luminescence 122 sp.iss.si.0(2007):176-178. |
入库方式： OAI收割
来源：半导体研究所
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