Deep level and photoluminescence studies of Er-implanted GaN films
文献类型：期刊论文
| 作者 | Song SF ; Chen WD ; Hsu CC ; Xu XR |
| 刊名 | journal of luminescence
 |
| 出版日期 | 2007 |
| 卷号 | 122 sp.iss.si期号:0页码:365-367 |
| 关键词 | GaN |
| ISSN号 | issn: 0022-2313 |
| 通讯作者 | song, sf, beijing univ, minist educ, key lab luminescence & opt informat, inst optoelect technol, beijing 100044, peoples r china. 电子邮箱地址: sfsong@center.njtu.edu.cn ; xrxu@center.njtu.edu.cn |
| 中文摘要 | deep level transient spectroscopy measurements were performed on the metal organic chemical vapor deposition epitaxially grown gan before and after the implantation with er. only one deep level located at 0.270 ev below the conduction band was found in the as-grown gan films. but four defect levels located at 0.300, 0.188, 0.600 and 0.410 ev below the conduction band were found in the er-implanted gan films after annealing at 900 degrees for 30 min. the origins of the deep defect levels were discussed. the photoluminescence (pl) properties of er-implanted gan thin films were also studied. after annealing at 900 degrees for 30 min in a nitrogen flow, er-related 1.54 mu m luminescence peaks could be observed for the er-implanted gan sample. moreover, the energy-transfer and recombination processes of the er-implanted gan film were described. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9746]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Song SF,Chen WD,Hsu CC,et al. Deep level and photoluminescence studies of Er-implanted GaN films[J]. journal of luminescence,2007,122 sp.iss.si(0):365-367. |
| APA | Song SF,Chen WD,Hsu CC,&Xu XR.(2007).Deep level and photoluminescence studies of Er-implanted GaN films.journal of luminescence,122 sp.iss.si(0),365-367. |
| MLA | Song SF,et al."Deep level and photoluminescence studies of Er-implanted GaN films".journal of luminescence 122 sp.iss.si.0(2007):365-367. |
入库方式： OAI收割
来源：半导体研究所
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