Exciton localization due to isoelectronic substitution in ZnSTe
文献类型：期刊论文
| 作者 | Xu ZY ; Yang XD ; Sun Z ; Sun BQ ; Ji Y ; Li GH ; Sou IK ; Ge WK |
| 刊名 | journal of luminescence
 |
| 出版日期 | 2007 |
| 卷号 | 122 sp.iss.si期号:0页码:402-404 |
| 关键词 | PRESSURE |
| ISSN号 | issn: 0022-2313 |
| 通讯作者 | xu, zy, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: zyxu@red.semi.ac.cn |
| 中文摘要 | we have systematically investigated the optical properties of isoelectronic centers (iecs) of znste in the whole composition range from zns to znte. in the s-rich znste photoluminescence is dominated by te-bound excitons, while in te-rich side, s-related bound exciton emission dominates the radiative recombination. localization nature of iec bound exciton emissions in both s-rich and te-rich side znste alloys are studied in detail. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9748]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu ZY,Yang XD,Sun Z,et al. Exciton localization due to isoelectronic substitution in ZnSTe[J]. journal of luminescence,2007,122 sp.iss.si(0):402-404. |
| APA | Xu ZY.,Yang XD.,Sun Z.,Sun BQ.,Ji Y.,...&Ge WK.(2007).Exciton localization due to isoelectronic substitution in ZnSTe.journal of luminescence,122 sp.iss.si(0),402-404. |
| MLA | Xu ZY,et al."Exciton localization due to isoelectronic substitution in ZnSTe".journal of luminescence 122 sp.iss.si.0(2007):402-404. |
入库方式： OAI收割
来源：半导体研究所
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