The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot
文献类型：期刊论文
| 作者 | Liu YM (Liu Yumin) ; Yu ZY (Yu Zhongyuan) ; Huang YZ (Huang Yongzhen) |
| 刊名 | international journal of modern physics b
 |
| 出版日期 | 2006 |
| 卷号 | 20期号:29页码:4899-4907 |
| ISSN号 | issn: 0217-9792 |
| 关键词 | quantum dot |
| 通讯作者 | liu, ym, beijing univ posts & telecommun, sch sci, beijing 100876, peoples r china. |
| 中文摘要 | on the basis of the finite element approach, we systematically investigated the strain field distribution of conical-shaped inas/gaas self-organized quantum dot using the two-dimensional axis-symmetric model. the normal strain, the hydrostatic strain and the biaxial strain components along the center axis path of the quantum dots are analyzed. the dependence of these strain components on volume, height-over-base ratio and cap layer (covered by cap layer or uncovered quantum dot) is investigated for the quantum grown on the (001) substrate. the dependence of the carriers' confining potentials on the three circumstances discussed above is also calculated in the framework of eight-band k (.) p theory. the numerical results are in good agreement with the experimental data of published literature. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9754]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu YM ,Yu ZY ,Huang YZ . The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot[J]. international journal of modern physics b,2006,20(29):4899-4907. |
| APA | Liu YM ,Yu ZY ,&Huang YZ .(2006).The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot.international journal of modern physics b,20(29),4899-4907. |
| MLA | Liu YM ,et al."The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot".international journal of modern physics b 20.29(2006):4899-4907. |
入库方式： OAI收割
来源：半导体研究所
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