XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells
文献类型：期刊论文
| 作者 | Sheng SR (Sheng Shuran) ; Hao HY (Hao Huiying) ; Diao HW (Diao Hongwei) ; Zeng XB (Zeng Xiangbo) ; Xu Y (Xu Ying) ; Liao XB (Liao Xianbo) ; Monchesky TL (Monchesky Theodore L.) |
| 刊名 | applied surface science
 |
| 出版日期 | 2006 |
| 卷号 | 253期号:3页码:1677-1682 |
| 关键词 | amorphous silicon |
| ISSN号 | issn: 0169-4332 |
| 通讯作者 | sheng, sr, dalhousie univ, dept phys & atmospher sci, halifax, ns b3h 3j5, canada. 电子邮箱地址: shuran.sheng@dal.ca |
| 中文摘要 | detailed x-ray photoelectron spectroscopy (xps) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/tco) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-si:h) and microcrystalline silicon (mu c-si:h) n-layer materials as well as tco materials zno and ito in the chemical, microstructural and diffusion properties of the back interfaces. no chemical reduction of tco was found for all variations of n-layer/tco interfaces. we found that n-a-si:h interfaces better with ito, while n-mu c-si:h, with zno. a cross-comparison shows that the n-a-si:h/ito interface is superior to the n-mu c-si:h/zno interface, as evidenced by the absence of oxygen segregation and less oxidized si atoms observed near the interface together with much less diffusion of tco into the n-layer. the results suggest that the n/tco interface properties are correlated with the characteristics of both the n-layer and the tco layer. combined with the results reported on the device performance using similar back n/tco contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/tco contacts. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9762]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sheng SR ,Hao HY ,Diao HW ,et al. XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells[J]. applied surface science,2006,253(3):1677-1682. |
| APA | Sheng SR .,Hao HY .,Diao HW .,Zeng XB .,Xu Y .,...&Monchesky TL .(2006).XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells.applied surface science,253(3),1677-1682. |
| MLA | Sheng SR ,et al."XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells".applied surface science 253.3(2006):1677-1682. |
入库方式： OAI收割
来源：半导体研究所
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