中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface

文献类型:期刊论文

作者Chen L; Zhang XH
刊名physica e-low-dimensional systems & nanostructures
出版日期2009
卷号42期号:2页码:150-153
关键词Fe thin film Anisotropic strain relaxation Magnetic anisotropy X-ray diffraction UNIAXIAL MAGNETIC-ANISOTROPY EPITAXIAL-GROWTH GAAS(001) DEVICES
通讯作者zhao, jh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail address: jhzhao@red.semi.ac.cn
合作状况其它
学科主题半导体物理
收录类别SCI
资助信息national natural science foundation of china 60836002 10674130 60521001;major state basic research of china 2007cb924903;chinese academy of sciences kjcx2.yw.w09-1
语种英语
公开日期2010-04-04
源URL[http://ir.semi.ac.cn/handle/172111/10197]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chen L,Zhang XH. Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface[J]. physica e-low-dimensional systems & nanostructures,2009,42(2):150-153.
APA Chen L,&Zhang XH.(2009).Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface.physica e-low-dimensional systems & nanostructures,42(2),150-153.
MLA Chen L,et al."Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface".physica e-low-dimensional systems & nanostructures 42.2(2009):150-153.

入库方式: OAI收割

来源:半导体研究所

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