Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods
文献类型：期刊论文
| 作者 | Zhou B ; Pan SW ; Chen R ; Chen SY ; Li C ; Lai HK ; Yu ; JZ ; Zhu XF |
| 刊名 | solid state communications
 |
| 出版日期 | 2009 |
| 卷号 | 149期号:43-44页码:1897-1901 |
| 关键词 | Strain-induced Electrochemical anodization Silicon germanium Heterogeneous nanostructures POROUS SILICON LAYER VISIBLE PHOTOLUMINESCENCE SURFACE-MORPHOLOGY THIN-FILMS SI GERMANIUM SUPERLATTICES NANOCRYSTALS RELAXATION GROWTH |
| 通讯作者 | chen, sy, xiamen univ, semicond photon res ctr, xiamen 361005, peoples r china. e-mail address: sychen@xmu.edu.cn |
| 合作状况 | 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | nation natural science foundation of china 50672079 60676027 60837001 60776007; national basic research program of china (973 program) 2007cb613404; china-most international sci & tech cooperation and exchange 2008dfa51230 |
| 语种 | 英语 |
| 公开日期 | 2010-04-04 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10199]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou B,Pan SW,Chen R,et al. Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods[J]. solid state communications,2009,149(43-44):1897-1901. |
| APA | Zhou B.,Pan SW.,Chen R.,Chen SY.,Li C.,...&Zhu XF.(2009).Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods.solid state communications,149(43-44),1897-1901. |
| MLA | Zhou B,et al."Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods".solid state communications 149.43-44(2009):1897-1901. |
入库方式： OAI收割
来源：半导体研究所
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