中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Evolution of wetting layer in InAs/GaAs quantum dot system

文献类型:期刊论文

作者Chen YH (Chen Y. H.) ; Ye XL (Ye X. L.) ; Wang ZG (Wang Z. G.)
刊名nanoscale research letters
出版日期2006
卷号1期号:1页码:79-83
关键词quantum dots wetting layer reflectance difference spectroscopy segregation
ISSN号1931-7573
通讯作者chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: yhchen@red.semi.ac.cn
中文摘要for inas/gaas quantum dot system, the evolution of the wetting layer (wl) with the inas deposition thickness has been studied by reflectance difference spectroscopy (rds). two transitions related to the heavy-and light-hole in the wl have been distinguished in rd spectra. taking into account the strain and segregation effects, a model has been presented to deduce the inas amount in the wl and the segregation coefficient of the indium atoms from the transition energies of heavy-and light-holes. the variation of the inas amount in the wl and the segregation coefficient are found to rely closely on the growth modes. in addition, the huge dots also exhibits a strong effect on the evolution of the wl. the observed linear dependence of in segregation coefficient upon the inas amount in the wl demonstrates that the segregation is enhanced by the strain in the wl.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10230]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Chen YH ,Ye XL ,Wang ZG . Evolution of wetting layer in InAs/GaAs quantum dot system[J]. nanoscale research letters,2006,1(1):79-83.
APA Chen YH ,Ye XL ,&Wang ZG .(2006).Evolution of wetting layer in InAs/GaAs quantum dot system.nanoscale research letters,1(1),79-83.
MLA Chen YH ,et al."Evolution of wetting layer in InAs/GaAs quantum dot system".nanoscale research letters 1.1(2006):79-83.

入库方式: OAI收割

来源:半导体研究所

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