Electronic structures of GaAs/AlxGa1-xAs quantum double
文献类型：期刊论文
| 作者 | Li SS (Li Shu-Shen) ; Xia JB (Xia Jian-Bai) |
| 刊名 | nanoscale research letters
 |
| 出版日期 | 2006 |
| 卷号 | 1期号:2页码:167-171 |
| 关键词 | electronic structures GaAs quantum double rings nanostructures effective-mass theory band mixing |
| ISSN号 | 1931-7573 |
| 通讯作者 | li, ss, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. e-mail: sslee@red.semi.ac.cn |
| 中文摘要 | in the framework of effective mass envelope function theory, the electronic structures of gaas/alxga1-xas quantum double rings(qdrs) are studied. our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. in calculations, the effects due to the different effective masses of electrons and holes in gaas and alxga1-xas and the valence band mixing are considered. the energy levels of electrons and holes are calculated for different shapes of qdrs. the calculated results are useful in designing and fabricating the interrelated photoelectric devices. the single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in qdrs. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10232]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li SS ,Xia JB . Electronic structures of GaAs/AlxGa1-xAs quantum double[J]. nanoscale research letters,2006,1(2):167-171. |
| APA | Li SS ,&Xia JB .(2006).Electronic structures of GaAs/AlxGa1-xAs quantum double.nanoscale research letters,1(2),167-171. |
| MLA | Li SS ,et al."Electronic structures of GaAs/AlxGa1-xAs quantum double".nanoscale research letters 1.2(2006):167-171. |
入库方式： OAI收割
来源：半导体研究所
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