Characteristics of InGaN multiple quantum well blue-violet laser diodes
文献类型：期刊论文
| 作者 | Li DY (Li Deyao) ; Zhang SM (Zhang Shuming) ; Wang JF (Wang Jianfeng) ; Chen J (Chen Jun) ; Chen LH (Chen Lianghui) ; Chong M (Chong Ming) ; Zhu JJ (Zhu Jianjun) ; Zhao DG (Zhao Degang) ; Liu ZS (Liu Zongshun) ; Yang H (Yang Hui) ; Liang JW (Liang Junwu) |
| 刊名 | science in china series e-technological sciences
 |
| 出版日期 | 2006 |
| 卷号 | 49期号:6页码:727-732 |
| 关键词 | metalorganic chemical vapor deposition (MOCVD) GaN-hased laser diodes multiple quantum well ridge waveguide threshold current ELECTRICAL-PROPERTIES GAN SUBSTRATE CONTACTS |
| ISSN号 | 1006-9321 |
| 通讯作者 | li, dy, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail: dyli@red.semi.ac.cn |
| 中文摘要 | studies on ingan multiple quantum well blue-violet laser diodes have been reported. laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. triple-axis x-ray diffraction (taxrd) measurements show that the multiple quantum wells were high quality. ridge waveguide laser diodes were fabricated with cleaved facet mirrors. the laser diodes lase at room temperature under a pulsed current. a threshold current density of 3.3 ka/cm(2) and a characteristic temperature to of 145 k were observed for the laser diode. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10244]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li DY ,Zhang SM ,Wang JF ,et al. Characteristics of InGaN multiple quantum well blue-violet laser diodes[J]. science in china series e-technological sciences,2006,49(6):727-732. |
| APA | Li DY .,Zhang SM .,Wang JF .,Chen J .,Chen LH .,...&Liang JW .(2006).Characteristics of InGaN multiple quantum well blue-violet laser diodes.science in china series e-technological sciences,49(6),727-732. |
| MLA | Li DY ,et al."Characteristics of InGaN multiple quantum well blue-violet laser diodes".science in china series e-technological sciences 49.6(2006):727-732. |
入库方式： OAI收割
来源：半导体研究所
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