The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers
文献类型：期刊论文
| 作者 | Wang XL (Wang X. L.) ; Zhao DG (Zhao D. G.) ; Li XY (Li X. Y.) ; Gong HM (Gong H. M.) ; Yang H (Yang H.) ; Liang JW (Liang J. W.) |
| 刊名 | materials letters
 |
| 出版日期 | 2006 |
| 卷号 | 60期号:29-30页码:3693-3696 |
| ISSN号 | 0167-577x |
| 关键词 | AlGaN LT AlN TAXRD dislocation |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail: wxl@mail.semi.ac.cn |
| 中文摘要 | to fabricate nitride-based ultraviolet optoelectronic devices, a deposition process for high-al-composition algan (al content > 50%) films with reduced dislocation densities must be developed. this paper describes the growth of high-al-composition algan film on (0001) sapphire via a lt ain nucleation layer by low pressure metalorganic chemical vapor deposition (lpmocvd). the influence of the low temperature ain buffer layer thickness on the high-al-content algan epilayer is investigated by triple-axis x-ray diffraction (taxrd), scanning electron microscopy (sem), and optical transmittance. the results show that the buffer thickness is a key parameter that affects the quality of the algan epilayer. an appropriate thickness results in the best structural properties and surface morphology. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10248]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XL ,Zhao DG ,Li XY ,et al. The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers[J]. materials letters,2006,60(29-30):3693-3696. |
| APA | Wang XL ,Zhao DG ,Li XY ,Gong HM ,Yang H ,&Liang JW .(2006).The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers.materials letters,60(29-30),3693-3696. |
| MLA | Wang XL ,et al."The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers".materials letters 60.29-30(2006):3693-3696. |
入库方式： OAI收割
来源：半导体研究所
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