Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells
文献类型：期刊论文
| 作者 | Yang XH (Yang Xiao-Hong) ; Han Q (Han Qin) ; Ni HQ (Ni Hai-Qiao) ; Huang SS (Huang She-Song) ; Du Y (Du Yun) ; Peng HL (Peng Hong-Ling) ; Xiong YH (Xiong Yong-Hua) ; Niu ZC (Niu Zhi-Chuan) ; Wu RH (Wu Rong-Han) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:12页码:3376-3379 |
| ISSN号 | 0256-307x |
| 通讯作者 | yang, xh, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail: xhyang@red.semi.ac.cn |
| 中文摘要 | a resonant-cavity enhanced reflective optical modulator is designed and frabricated, with three groups of three highly strained ingaas/gaas quantum wells in the cavity, for the low voltage and high contrast ratio operation. the quantum wells are positioned in antinodes of the optical standing wave. the modulator is grown in a single growth step in an molecular beam epitaxy system, using gaas/aias distributed bragg reflectors as both the top and bottom mirrors. results show that the reflection device has a modulation extinction of 3 db at -4.5 v bias. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10256]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang XH ,Han Q ,Ni HQ ,et al. Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells[J]. chinese physics letters,2006,23(12):3376-3379. |
| APA | Yang XH .,Han Q .,Ni HQ .,Huang SS .,Du Y .,...&Wu RH .(2006).Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells.chinese physics letters,23(12),3376-3379. |
| MLA | Yang XH ,et al."Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells".chinese physics letters 23.12(2006):3376-3379. |
入库方式： OAI收割
来源：半导体研究所
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