Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
文献类型：期刊论文
| 作者 | Shi LW (Shi Liwei) ; Wang Q (Wang Qiang) ; Li YG (Li Yuguo) ; Xue CS (Xue Chengshan) ; Zhuang HZ (Zhuang Huizhao) |
| 刊名 | applied surface science
 |
| 出版日期 | 2006 |
| 卷号 | 252期号:24页码:8424-8427 |
| 关键词 | ion implantation annealing chemical etching photoluminescence POROUS SILICON LUMINESCENCE |
| ISSN号 | 0169-4332 |
| 通讯作者 | shi, lw, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. e-mail: liweishi@semi.ac.en |
| 中文摘要 | the microstructural and optical analysis of si layers emitting blue luminescence at about 431 nm is reported. these structures have been synthesized by c+ ion implantation and high-temperature annealing in hydrogen atmosphere and electrochemical etching sequentially. with the increasing etching time, the intensity of the blue peak increases at first, decreases then and is substituted by a new red peak at 716 nm at last, which shows characteristics of the emission of porous silicon. c=o compounds are induced during c+ implantation and nanometer silicon with embedded structure is formed during annealing, which contributes to the blue emission. the possible mechanism of photoluminescence is presented. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10304]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shi LW ,Wang Q ,Li YG ,et al. Photoluminescence from C+ ion-implanted and electrochemical etched Si layers[J]. applied surface science,2006,252(24):8424-8427. |
| APA | Shi LW ,Wang Q ,Li YG ,Xue CS ,&Zhuang HZ .(2006).Photoluminescence from C+ ion-implanted and electrochemical etched Si layers.applied surface science,252(24),8424-8427. |
| MLA | Shi LW ,et al."Photoluminescence from C+ ion-implanted and electrochemical etched Si layers".applied surface science 252.24(2006):8424-8427. |
入库方式： OAI收割
来源：半导体研究所
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