p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering
文献类型：期刊论文
| 作者 | Wang P (Wang Peng) ; Chen NF (Chen Nuofu) ; Yin ZG (Yin Zhigang) ; Dai RX (Dai Ruixuan) ; Bai YM (Bai Yiming) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 89期号:20页码:art.no.202102 |
| 关键词 | ZNO THIN-FILMS MGXZN1-XO DEVICES ALLOY |
| ISSN号 | 0003-6951 |
| 通讯作者 | wang, p, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: pwang@semi.ac.cn |
| 中文摘要 | sb-doped zn1-xmgxo films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. the p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/v s. a p-n homojunction comprising an undoped zno layer and an sb-doped zn0.95mg0.05o layer shows a typical rectifying characteristic. sb-doped p-type zn1-xmgxo films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of zno-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10308]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang P ,Chen NF ,Yin ZG ,et al. p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering[J]. applied physics letters,2006,89(20):art.no.202102. |
| APA | Wang P ,Chen NF ,Yin ZG ,Dai RX ,&Bai YM .(2006).p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering.applied physics letters,89(20),art.no.202102. |
| MLA | Wang P ,et al."p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering".applied physics letters 89.20(2006):art.no.202102. |
入库方式： OAI收割
来源：半导体研究所
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