Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices
文献类型：期刊论文
| 作者 | Ma RM (Ma R. M.) ; Dai L (Dai L.) ; Huo HB (Huo H. B.) ; Yang WQ (Yang W. Q.) ; Qin GG (Qin G. G.) ; Tan PH (Tan P. H.) ; Huang CH (Huang C. H.) ; Zheng J (Zheng J.) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 89期号:20页码:art.no.203120 |
| 关键词 | WURTZITE ZNS NANORIBBONS LUMINESCENCE NANOWIRES GROWTH |
| ISSN号 | 0003-6951 |
| 通讯作者 | dai, l, peking univ, sch phys, beijing 100871, peoples r china. e-mail: lundai@pku.edu.cn |
| 中文摘要 | high quality n-type cds nanobelts (nbs) were synthesized via an in situ indium doping chemical vapor deposition method and fabricated into field effect transistors (fets). the electron concentrations and mobilities of these cds nbs are around (1.0x10(16)-3.0x10(17))/cm(3) and 100-350 cm(2)/v s, respectively. an on-off ratio greater than 10(8) and a subthreshold swing as small as 65 mv/decade are obtained at room temperature, which give the best performance of cds nanowire/nanobelt fets reported so far. n-type cds nb/p(+)-si heterojunction light emitting diodes were fabricated. their electroluminescence spectra are dominated by an intense sharp band-edge emission and free from deep-level defect emissions. (c) 2006 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10310]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma RM ,Dai L ,Huo HB ,et al. Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices[J]. applied physics letters,2006,89(20):art.no.203120. |
| APA | Ma RM .,Dai L .,Huo HB .,Yang WQ .,Qin GG .,...&Zheng J .(2006).Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices.applied physics letters,89(20),art.no.203120. |
| MLA | Ma RM ,et al."Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices".applied physics letters 89.20(2006):art.no.203120. |
入库方式： OAI收割
来源：半导体研究所
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