Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers
文献类型：期刊论文
| 作者 | Tan PH ; Gan HD
|
| 刊名 | journal of magnetism and magnetic materials
 |
| 出版日期 | 2007 |
| 卷号 | 308期号:2页码:313-317 |
| 关键词 | magnetic semiconductors |
| ISSN号 | 0304-8853 |
| 通讯作者 | zhao, jh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: jhzhao@red.semi.ac.cn |
| 中文摘要 | the depth distribution of the hole density p in 500 nm-thick (ga,mn)as layers is investigated. from raman scattering spectra, it is found that the gradients of p are opposite in the as-grown and annealed layers. at the region around the free surface, with increasing etching depth, p significantly increases in the as-grown layer; however, p decreases distinctly in the annealed layer. then, in the bulk, p becomes almost homogeneous for both cases. the etching-depth dependence of curie temperature obtained from magnetic measurements is in agreement with the distribution characterization of p. these results suggest that annealing induces outdiffusion of mn interstitials towards the free surface, and incomplete outdiffusion during the growth leads to an accumulation of mn interstitials around the free surface of the as-grown (ga,mn)as. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10320]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tan PH,Gan HD. Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers[J]. journal of magnetism and magnetic materials,2007,308(2):313-317. |
| APA | Tan PH,&Gan HD.(2007).Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers.journal of magnetism and magnetic materials,308(2),313-317. |
| MLA | Tan PH,et al."Two opposite gradients of hole density in as-grown and annealed (Ga,Mn)As layers".journal of magnetism and magnetic materials 308.2(2007):313-317. |
入库方式： OAI收割
来源：半导体研究所
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