Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field
文献类型：期刊论文
| 作者 | Zhang XW (Zhang X. W.) ; Li SS (Li S. S.) ; Xia JB (Xia J. B.) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 89期号:17页码:art.no.172113 |
| 关键词 | CONDUCTING NANOWIRES TRANSISTOR |
| ISSN号 | 0003-6951 |
| 通讯作者 | zhang, xw, china ctr adv sci & technol, world lab, pob 8730, beijing 100080, peoples r china. e-mail: zhxw99@semi.ac.cn |
| 中文摘要 | the electronic structures, rashba spin-orbit couplings, and transport properties of insb nanowires and nanofilms are investigated theoretically. when both the radius of the wire (or the thickness of the film) and the electric field are large, the electron bands and hole bands overlap, and the fermi level crosses with some bands, which means that the semiconductors transit into metals. meanwhile, the rashba coefficients behave in an abnormal way. the conductivities increase dramatically when the electric field is larger than a critical value. this semiconductor-metal transition is observable at the room temperature. (c) 2006 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10334]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang XW ,Li SS ,Xia JB . Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field[J]. applied physics letters,2006,89(17):art.no.172113. |
| APA | Zhang XW ,Li SS ,&Xia JB .(2006).Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field.applied physics letters,89(17),art.no.172113. |
| MLA | Zhang XW ,et al."Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field".applied physics letters 89.17(2006):art.no.172113. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。