Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films
文献类型：期刊论文
| 作者 | Gao HY (Gao Haiyong) |
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2006 |
| 卷号 | 35期号:1页码:117-120 |
| 关键词 | GaN nanorods Ga2O3/ZnO films RF magnetron sputtering nitridation OPTICAL-PROPERTIES LASER-DIODES ZNO SUBSTRATE NANOWIRES LAYER |
| ISSN号 | 1386-9477 |
| 通讯作者 | gao, hy, chinese acad sci, inst semicond, novel mat dept, beijing 100083, peoples r china. e-mail: hygao@semi.ac.cn |
| 中文摘要 | gallium nitride (gan) nanorods were synthesized by nitriding ga2o3/zno films which were deposited in turn on si (111) substrates using radio frequency (rf) magnetron sputtering system. in the nitridation process, zno was reduced to zn and zn sublimated at 950 degrees c. ga2o3 was reduced to ga2o and ga2o reacted with nh3 to synthesize gan nanorods with the assistance of the sublimation of zn. the morphology and structure of the nanorods were studied by scanning electron microscopy (sem), transmission electron microscopy (tem), high-resolution transmission electron microscopy (hrtem) and selected-area electron diffraction (saed). the composition of gan nanorods was studied by fourier-transform infrared spectrophotometer (ftir). the synthesized nanorods is hexagonal wurtzite structured. nitridation time of the samples has an evident influence on the morphology of gan nanorods synthesized by this method. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10342]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao HY . Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films[J]. physica e-low-dimensional systems & nanostructures,2006,35(1):117-120. |
| APA | Gao HY .(2006).Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films.physica e-low-dimensional systems & nanostructures,35(1),117-120. |
| MLA | Gao HY ."Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films".physica e-low-dimensional systems & nanostructures 35.1(2006):117-120. |
入库方式： OAI收割
来源：半导体研究所
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