MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
文献类型:期刊论文
作者 | Jiao YH (Jiao Y. H.) ; Wu J (Wu J.) ; Xu B (Xu B.) ; Jin P (Jin P.) ; Hu LJ (Hu L. J.) ; Liang LY (Liang L. Y.) ; Wang ZG (Wang Z. G.) |
刊名 | physica e-low-dimensional systems & nanostructures |
出版日期 | 2006 |
卷号 | 35期号:1页码:194-198 |
ISSN号 | 1386-9477 |
关键词 | metamorphic long wavelength quantum dots molecular beam epitaxy MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION 1.3 MU-M GAAS EMISSION RANGE ISLANDS ARRAYS LASERS |
通讯作者 | jiao, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: jiaoyuheng@mail.semi.ac.cn |
中文摘要 | gaas-based inas quantum dots using ingaas composition-graded metamorphic layers have been investigated by molecular beam epitaxy. emission with the wavelength similar to 1.5 mu m from the dots was obtained at room temperature with the relatively large full width at half maximum. the emission wavelength is relatively stable when subjected to fast annealing. the number density of dots reached similar to 6 x 10(10) cm(-2). undulated morphology was observed on the surface of the sample, which has some influence on the dot size and distribution. in epilayers, misfit dislocations were confined within the step-graded ingaas metamorphic buffer layer. (c) 2006 elsevier b.v. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-04-11 |
源URL | [http://ir.semi.ac.cn/handle/172111/10344] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Jiao YH ,Wu J ,Xu B ,et al. MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting[J]. physica e-low-dimensional systems & nanostructures,2006,35(1):194-198. |
APA | Jiao YH .,Wu J .,Xu B .,Jin P .,Hu LJ .,...&Wang ZG .(2006).MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting.physica e-low-dimensional systems & nanostructures,35(1),194-198. |
MLA | Jiao YH ,et al."MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting".physica e-low-dimensional systems & nanostructures 35.1(2006):194-198. |
入库方式: OAI收割
来源:半导体研究所
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