中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting

文献类型:期刊论文

作者Jiao YH (Jiao Y. H.) ; Wu J (Wu J.) ; Xu B (Xu B.) ; Jin P (Jin P.) ; Hu LJ (Hu L. J.) ; Liang LY (Liang L. Y.) ; Wang ZG (Wang Z. G.)
刊名physica e-low-dimensional systems & nanostructures
出版日期2006
卷号35期号:1页码:194-198
ISSN号1386-9477
关键词metamorphic long wavelength quantum dots molecular beam epitaxy MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION 1.3 MU-M GAAS EMISSION RANGE ISLANDS ARRAYS LASERS
通讯作者jiao, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: jiaoyuheng@mail.semi.ac.cn
中文摘要gaas-based inas quantum dots using ingaas composition-graded metamorphic layers have been investigated by molecular beam epitaxy. emission with the wavelength similar to 1.5 mu m from the dots was obtained at room temperature with the relatively large full width at half maximum. the emission wavelength is relatively stable when subjected to fast annealing. the number density of dots reached similar to 6 x 10(10) cm(-2). undulated morphology was observed on the surface of the sample, which has some influence on the dot size and distribution. in epilayers, misfit dislocations were confined within the step-graded ingaas metamorphic buffer layer. (c) 2006 elsevier b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10344]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Jiao YH ,Wu J ,Xu B ,et al. MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting[J]. physica e-low-dimensional systems & nanostructures,2006,35(1):194-198.
APA Jiao YH .,Wu J .,Xu B .,Jin P .,Hu LJ .,...&Wang ZG .(2006).MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting.physica e-low-dimensional systems & nanostructures,35(1),194-198.
MLA Jiao YH ,et al."MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting".physica e-low-dimensional systems & nanostructures 35.1(2006):194-198.

入库方式: OAI收割

来源:半导体研究所

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