Passively mode-locked Nd : YVO4 laser using semiconductor saturable absorption mirrors of interface states relaxation region
文献类型：期刊论文
| 作者 | Wang YG (Wang YongGang) ; Ma XY (Ma XiaoYu) ; Liu Y (Liu Yang) ; Sun LQ (Sun LiQun) ; Tian Q (Tian Qian) |
| 刊名 | optik
 |
| 出版日期 | 2006 |
| 卷号 | 117期号:10页码:474-476 |
| 关键词 | SESAM mode lock interface ABSORBER GAAS |
| ISSN号 | 0030-4026 |
| 通讯作者 | wang, yg, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: chinawygxjw@163.com |
| 中文摘要 | semiconductor saturable absorber mirrors (sesams) with gaas/air interface relaxation region have less nonsaturable loss than those with low temperature grown in0.25ga0.75as relaxation region. a thin layer of sio2 and a high reflectivity film of si/(sio2/si)(4) were coated on the sesams, respectively in order to improve the sesam's threshold for damage. the passively continuous wave mode-locked lasers with two such sesams were demonstrated, and the sesam with high reflectivity film of si/(sio2/si)(4) is proved to be helpful for high output power. (c) 2006 elsevier gmbh. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10348]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang YG ,Ma XY ,Liu Y ,et al. Passively mode-locked Nd : YVO4 laser using semiconductor saturable absorption mirrors of interface states relaxation region[J]. optik,2006,117(10):474-476. |
| APA | Wang YG ,Ma XY ,Liu Y ,Sun LQ ,&Tian Q .(2006).Passively mode-locked Nd : YVO4 laser using semiconductor saturable absorption mirrors of interface states relaxation region.optik,117(10),474-476. |
| MLA | Wang YG ,et al."Passively mode-locked Nd : YVO4 laser using semiconductor saturable absorption mirrors of interface states relaxation region".optik 117.10(2006):474-476. |
入库方式： OAI收割
来源：半导体研究所
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