Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
文献类型：期刊论文
| 作者 | Liu JP (Liu J. P.) ; Shen GD (Shen G. D.) ; Zhu JJ (Zhu J. J.) ; Zhang SM (Zhang S. M.) ; Jiang DS (Jiang D. S.) ; Yang H (Yang H.) |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2006 |
| 卷号 | 295期号:1页码:40370 |
| 关键词 | metal organic chemical vapor deposition violet light-emitting diodes AlInGaN quaternary alloy QUATERNARY ALINGAN EPILAYERS EMISSION GAN |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu, jp, beijing univ technol, beijing optoelect technol lab, pingleyuan 100, beijing 100022, chaoyang dist, peoples r china. e-mail: jianpingliu76@hotmail.com |
| 中文摘要 | high-performance violet light-emitting diodes (leds) with ingan/alingan multiple quantum well (mqw) active regions were grown by metal organic chemical vapor deposition (mocvd). the interface flatness of the ingan/alingan mqws and the emission efficiency of the led are firstly improved with increasing al content in the alingan barrier layer, and then degraded as al content increases further, being optimal when al content is 0.12. similarly, the result is optimized if the indium content is approximately 2.5% in the alingan barrier layer. the mechanisms which have influences on the radiative efficiency when the al content increases are discussed. a high output power of 7.3 mw for the violet led at 20 ma current has been achieved. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10350]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu JP ,Shen GD ,Zhu JJ ,et al. Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD[J]. journal of crystal growth,2006,295(1):40370. |
| APA | Liu JP ,Shen GD ,Zhu JJ ,Zhang SM ,Jiang DS ,&Yang H .(2006).Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD.journal of crystal growth,295(1),40370. |
| MLA | Liu JP ,et al."Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD".journal of crystal growth 295.1(2006):40370. |
入库方式： OAI收割
来源：半导体研究所
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