Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field
文献类型：期刊论文
| 作者 | Liu YM (Liu Yu-Min) ; Yu ZY (Yu Zhong-Yuan) ; Yang HB (Yang Hong-Bo) ; Huang YZ (Huang Yong-Zhen) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2006 |
| 卷号 | 55期号:10页码:5023-5029 |
| ISSN号 | 1000-3290 |
| 关键词 | strain semiconductor quantum dot self-organization ELECTRONIC-STRUCTURE FINITE-ELEMENT STATE |
| 通讯作者 | liu, ym, beijing univ posts & telecommun, sch sci, beijing 100876, peoples r china. e-mail: liuyuminhqy@263.net |
| 中文摘要 | a systematic investigation is made on the influence of the longitudinal and transverse period distributions of quantum dots on the elastic strain field. the results showed that the effects of the longitudinal period and transverse period on the strain field are just opposite along the direction of center-axis of the quantum dots, and under proper conditions, both effects can be eliminated. the results demonstrate that in calculating the effect of the strain field on the electronic structure, one must take into account the quantum dots period distribution, and it is inadequate to use the isolated quantum dot model in simulating the strain field. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10356]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu YM ,Yu ZY ,Yang HB ,et al. Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field[J]. acta physica sinica,2006,55(10):5023-5029. |
| APA | Liu YM ,Yu ZY ,Yang HB ,&Huang YZ .(2006).Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field.acta physica sinica,55(10),5023-5029. |
| MLA | Liu YM ,et al."Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field".acta physica sinica 55.10(2006):5023-5029. |
入库方式： OAI收割
来源：半导体研究所
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