Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers
文献类型：期刊论文
| 作者 | Pan JQ (Pan Jiao-Qing) ; Zhao Q (Zhao Qian) ; Zhu HL (Zhu Hong-Liang) ; Zhao LJ (Zhao Ling-Juan) ; Ding Y (Ding Ying) ; Wang BJ (Wang Bao-Jun) ; Zhou F (Zhou Fan) ; Wang LF (Wang Lu-Feng) ; Wang W (Wang Wei) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2006 |
| 卷号 | 55期号:10页码:5216-5220 |
| 关键词 | MOCVD InGaAs/InGaAsP strained quantum well distributed feedback laser TUNABLE DIODE-LASER QUANTUM-WELL LASER 1.74 MU-M SPECTROMETER METHANE POWER |
| ISSN号 | 1000-3290 |
| 通讯作者 | pan, jq, chinese acad sci, inst semicond, optoelect res & dev ctr, beijing 100083, peoples r china. e-mail: jqpan@red.semi.ac.cn |
| 中文摘要 | 1.6-1.7 mu m highly strained ingaas/ingaasp distributed feedback lasers was grown and fabricated by low pressure mentalorganic chemical vapor deposition. high quality highly strained ingaas/inp materials were obtained by using strain buffer layer. four pairs of highly strained quantum wells were used in the devices and carrier blocking layer was used to improve the temperature characteristics of the devices. the uncoated 1.66 mu m and 1.74 mu m lasers with ridge wave guide 3 mu m wide have low threshold current (< 15ma) and high output power (> 14mw at 100ma). in the temperature range from 10 degrees c to 40 degrees c, the characteristic temperature t-0 of the 1.74 mu m laser is 57k, which is comparable to that of the 1.55 mu m-wavelength ingaasp/inp-dfb laser. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10358]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan JQ ,Zhao Q ,Zhu HL ,et al. Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers[J]. acta physica sinica,2006,55(10):5216-5220. |
| APA | Pan JQ .,Zhao Q .,Zhu HL .,Zhao LJ .,Ding Y .,...&Wang W .(2006).Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers.acta physica sinica,55(10),5216-5220. |
| MLA | Pan JQ ,et al."Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers".acta physica sinica 55.10(2006):5216-5220. |
入库方式： OAI收割
来源：半导体研究所
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