Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate
文献类型：期刊论文
| 作者 | Zhao L (Zhao Lei) ; Zuo YH (Zuo Yuhua) ; Cheng BW (Cheng Buwen) ; Yu JZ (Yu Jinzhong) ; Wang QM (Wang Qiming) |
| 刊名 | journal of materials science & technology
 |
| 出版日期 | 2006 |
| 卷号 | 22期号:5页码:651-654 |
| 关键词 | Si1_xGex Ge content composition determination double crystals X-ray diffraction (DCXRD) micro-Raman measurement BAND-GAP HETEROSTRUCTURES SUPERLATTICES ALLOYS RELAXATION SCATTERING THICKNESS STRAIN |
| ISSN号 | 1005-0302 |
| 通讯作者 | zhao, l, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail: leizhao@semi.ac.cn |
| 中文摘要 | it is important to acquire the composition of si1-xgex layer, especially that with high ge content, epitaxied on si substrate. two nondestructive examination methods, double crystals x-ray diffraction (dcxrd) and micro-raman measurement, were introduced comparatively to determine x value in si1-xgex: layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals x-ray diffraction are not credible due to the large strain relaxation occurring in si1-xgex layers when ge content is higher than about 20%. micro-raman measurement is more appropriate for determining high ge content than dcxrd. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10360]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao L ,Zuo YH ,Cheng BW ,et al. Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate[J]. journal of materials science & technology,2006,22(5):651-654. |
| APA | Zhao L ,Zuo YH ,Cheng BW ,Yu JZ ,&Wang QM .(2006).Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate.journal of materials science & technology,22(5),651-654. |
| MLA | Zhao L ,et al."Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate".journal of materials science & technology 22.5(2006):651-654. |
入库方式： OAI收割
来源：半导体研究所
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