Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer
文献类型：期刊论文
| 作者 | Liu XF (Liu Xing-Fang) ; Sun GS (Sun Guo-Sheng) ; Li JM (Li Jin-Min) ; Zhao YM (Zhao Yong-Mei) ; Li JY (Li Jia-Ye) ; Wang L (Wang Lei) ; Zhao WS (Zhao Wan-Shun) ; Zeng YP (Zeng Yi-Ping) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:10页码:2834-2837 |
| ISSN号 | 0256-307x |
| 关键词 | SPECTROSCOPY GROWTH POLYTYPES SILICON |
| 通讯作者 | liu, xf, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china. e-mail: liuxf@mail.semi.ac.cn |
| 中文摘要 | we report on stacking fault (sf) detection in free-standing cubic-sic epilayer by the raman measurements. the epilayer with enhanced sfs is heteroepitaxially grown by low pressure chemical vapour deposition on a si(100) substrate and is released in koh solution by micromechanical manufacture, on which the raman measurements are performed in a back scattering geometry. the to line of the raman spectra is considerably broadened and distorted. we discuss the influence of sfs on the intensity profiles of to mode by comparing our experimental data with the simulated results based on the raman bond polarizability (bp) model in the framework of linear-chain concept. good agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the sfs to be 11 angstrom in the bp model. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10366]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu XF ,Sun GS ,Li JM ,et al. Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer[J]. chinese physics letters,2006,23(10):2834-2837. |
| APA | Liu XF .,Sun GS .,Li JM .,Zhao YM .,Li JY .,...&Zeng YP .(2006).Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer.chinese physics letters,23(10),2834-2837. |
| MLA | Liu XF ,et al."Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer".chinese physics letters 23.10(2006):2834-2837. |
入库方式： OAI收割
来源：半导体研究所
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