Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
文献类型：期刊论文
| 作者 | Liang S (Liang S.) ; Zhu HL (Zhu H. L.) ; Ye XL (Ye X. L.) ; Wang W (Wang W.) |
| 刊名 | applied surface science
 |
| 出版日期 | 2006 |
| 卷号 | 252期号:23页码:8126-8130 |
| 关键词 | photoluminescence quantum dots indium arsenide 1.3 MU-M CHEMICAL-VAPOR-DEPOSITION PHASE-EPITAXY GAAS LUMINESCENCE SUBSTRATE ISLANDS DENSITY LASERS LAYER |
| ISSN号 | 0169-4332 |
| 通讯作者 | liang, s, chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china. e-mail: liangsong@red.semi.ac.cn |
| 中文摘要 | the influence of gaas(1 0 0)2 degrees substrate misorientation on the formation and optical properties of inas quantum dots (qds) has been studied in compare with dots on exact gaas(1 0 0) substrates. it is shown that, while qds on exact substrates have only one dominant size, dots on misoriented substrates are formed in lines with a clear bimodal size distribution. room temperature photoluminescence measurements show that qds on misoriented substrates have narrower fwhm, longer emission wavelength and much larger pl intensity relative to those of dots on exact substrates. however, our rapid thermal annealing (rta) experiments indicate that annealing shows a stronger effect on dots with misoriented substrates by greatly accelerating the degradation of material quality. (c) 2005 elsevier b.v all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10368]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liang S ,Zhu HL ,Ye XL ,et al. Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots[J]. applied surface science,2006,252(23):8126-8130. |
| APA | Liang S ,Zhu HL ,Ye XL ,&Wang W .(2006).Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots.applied surface science,252(23),8126-8130. |
| MLA | Liang S ,et al."Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots".applied surface science 252.23(2006):8126-8130. |
入库方式： OAI收割
来源：半导体研究所
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