Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber
文献类型：期刊论文
| 作者 | Pan SD (Pan Shu-Di) ; He JL (He Jing-Liang) ; Hou YE (Hou Yu-E) ; Fan YX (Fan Ya-Xian) ; Wang HT (Wang Hui-Tian) ; Wang YG (Wang Yong-Gang) ; Ma XY (Ma Xiao-Yu) |
| 刊名 | ieee journal of quantum electronics
 |
| 出版日期 | 2006 |
| 卷号 | 42期号:9-10页码:1097-1100 |
| 关键词 | diode-pumped lasers mode-locked lasers neodymium-solid-state lasers semiconductor absorber SATURABLE BRAGG REFLECTOR SOLID-STATE LASERS ND-YVO4 LASER MIRRORS |
| ISSN号 | 0018-9197 |
| 通讯作者 | pan, sd, shandong normal univ, coll phys & elect, jinan 250014, peoples r china. e-mail: jlhe@icm.sdu.edu.cn ; htwang@nju.edu.cn ; wygxjw@red.semi.ac.cn |
| 中文摘要 | we have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped nd:ylf laser with a semiconductor saturable absorber mirror of single-quantum-well (in0.25ga0.75as) grown by metal-organic chemical-vapor deposition technique at low temperature. the saturable absorber was used as nonlinear absorber and output coupler simultaneously. stable pulse duration of 3 ps has been achieved at the repetition rate of 98 mhz. the average output power was 530 mw at 1053 nm under the incident pump power of 10 w, corresponding to the peak power of 1.8 kw and pulse energy of 5.4 nj. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10376]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan SD ,He JL ,Hou YE ,et al. Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber[J]. ieee journal of quantum electronics,2006,42(9-10):1097-1100. |
| APA | Pan SD .,He JL .,Hou YE .,Fan YX .,Wang HT .,...&Ma XY .(2006).Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber.ieee journal of quantum electronics,42(9-10),1097-1100. |
| MLA | Pan SD ,et al."Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber".ieee journal of quantum electronics 42.9-10(2006):1097-1100. |
入库方式： OAI收割
来源：半导体研究所
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