Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering
文献类型：期刊论文
| 作者 | Zhou SQ (Zhou Shengqiang) ; Wu MF (Wu M. F.) ; Yao SD (Yao S. D.) ; Zhang BS (Zhang B. S.) ; Yang H (Yang H.) |
| 刊名 | superlattices and microstructures
 |
| 出版日期 | 2006 |
| 卷号 | 40期号:3页码:137-143 |
| ISSN号 | 0749-6036 |
| 关键词 | nitride semiconductors superlattice Rutherford backscattering/channeling transmission electron microscopy x-ray diffraction MULTIPLE-QUANTUM WELLS OPTICAL-PROPERTIES INGAN/GAN STRAIN INTERFACE GROWTH GAN |
| 通讯作者 | zhou, sq, forschungszentrum rossendorf ev, pob 51 01 19, d-01314 dresden, germany. e-mail: zhousq2000@yahoo.com ; sdyao@pku.edu.cn |
| 中文摘要 | we report on structural characterization of algan/gan superlattices grown on sapphire. the superlattice formation is evidenced by high-resolution x-ray diffraction and transmission electron microscopy. the high resolution x-ray diffraction spectra exhibit a pattern of satellite peaks. the in-plane lattice constants of the superlattices indicate the coherent growth of the algan layer onto gan. the average at composition in the superlattices is determined to be 0.08 by rutherford backscattering spectroscopy. the average parallel and perpendicular elastic strains for the sls are determined to be (e(parallel to)) = +0.25% and (e(perpendicular to)) = -0.17%. (c) 2006 elsevier ltd. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10388]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou SQ ,Wu MF ,Yao SD ,et al. Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering[J]. superlattices and microstructures,2006,40(3):137-143. |
| APA | Zhou SQ ,Wu MF ,Yao SD ,Zhang BS ,&Yang H .(2006).Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering.superlattices and microstructures,40(3),137-143. |
| MLA | Zhou SQ ,et al."Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering".superlattices and microstructures 40.3(2006):137-143. |
入库方式： OAI收割
来源：半导体研究所
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