Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction
文献类型：期刊论文
| 作者 | Zhao HQ (Zhao Hong-Quan) ; Yu LJ (Yu Li-Juan) ; Huang YZ (Huang Yong-Zhen) ; Wang YT (Wang Yu-Tian) |
| 刊名 | materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 2006 |
| 卷号 | 133期号:1-3页码:117-123 |
| 关键词 | InP Si X-ray double crystalline diffraction thermal strain wafer bonding OPTOELECTRONIC DEVICES EPITAXIAL OVERGROWTHS TEMPERATURE INTERFACE STRESSES VCSELS SURFACES ENERGY |
| ISSN号 | 0921-5107 |
| 通讯作者 | zhao, hq, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail: zhggeneral@red.semi.ac.cn |
| 中文摘要 | wafer bonding between p-si and an n-inp-based ingaasp multiple quantum well (mqw) wafer was achieved by a direct wafer bonding method. in order to investigate the strain at different annealing temperatures, four pre-bonded pairs were selected, and pair one was annealed at 150 degrees c, pair two at 250 degrees c, pair three at 350 degrees c, and pair four at 450 degrees c, respectively. the macroscopical strains on the bonded epitaxial layer include two parts, namely the internal strain and the strain caused by the mismatching of the crystalline orientation between inp (100) and si (100). these strains were measured by the x-ray double crystalline diffraction, and theoretical calculations of the longitudinal and perpendicular thermal strains at different annealing temperatures were calculated using the bi-metal thermostats model, both the internal strain and the thermal strain increase with the annealing temperature. normal thermal stress and the elastic biaxial thermal strain energy were also calculated using this model. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10394]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao HQ ,Yu LJ ,Huang YZ ,et al. Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction[J]. materials science and engineering b-solid state materials for advanced technology,2006,133(1-3):117-123. |
| APA | Zhao HQ ,Yu LJ ,Huang YZ ,&Wang YT .(2006).Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction.materials science and engineering b-solid state materials for advanced technology,133(1-3),117-123. |
| MLA | Zhao HQ ,et al."Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction".materials science and engineering b-solid state materials for advanced technology 133.1-3(2006):117-123. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。