Nanocrystalline silicon films with high conductivity and the application for PIN solar cells
文献类型：期刊论文
| 作者 | Min C (Cui Min) ; Zhang WJ (Zhang Weija) ; Wang TM (Wang Tianmin) ; Jin F (Jin Fei) ; Li GH (Li Guohua) ; Ding K (Ding Kun) |
| 刊名 | vacuum
 |
| 出版日期 | 2006 |
| 卷号 | 81期号:1页码:126-128 |
| 关键词 | nc-Si : H conductivity PECVD films solar cells |
| ISSN号 | 0042-207x |
| 通讯作者 | min, c, beihang univ, sch sci, ctr condensed phys & mat phys, beijing 100083, peoples r china. e-mail: xinzhu_hust@126.com ; weijia_zhang@sina.com.cn |
| 中文摘要 | intrinsic nanocrystalline silicon films (nc-si:h) were prepared by plasma enhanced chemical vapor deposition (pecvd) method. films' microstructures and characteristics were studied with raman spectroscopy and atom force microscope (afm). the electronic conductivity of nc-si:h films was found to be 4.9 x 10(0)omega(-1) cm(-1), which was one order of magnitude higher than the reported 10(-3)-10(-1)omega(-1)cm(-1). and pin solar cells with nc-si:h film as intrinsic thin-layer (ito/n(+)-nc-si:h/i-nc-si:h/p-c-si/ag) were researched. the cell's performances were measured, the open-circuit voltage v-oc was 534.7 mv, short-circuit current i-sc was 49.24 ma (3 cm(2)) and fill factor ff was 0.4228. (c) 2006 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10396]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Min C ,Zhang WJ ,Wang TM ,et al. Nanocrystalline silicon films with high conductivity and the application for PIN solar cells[J]. vacuum,2006,81(1):126-128. |
| APA | Min C ,Zhang WJ ,Wang TM ,Jin F ,Li GH ,&Ding K .(2006).Nanocrystalline silicon films with high conductivity and the application for PIN solar cells.vacuum,81(1),126-128. |
| MLA | Min C ,et al."Nanocrystalline silicon films with high conductivity and the application for PIN solar cells".vacuum 81.1(2006):126-128. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。