Design of shallow acceptors in ZnO: First-principles band-structure calculations
文献类型：期刊论文
| 作者 | Li J (Li Jingbo) ; Wei SH (Wei Su-Huai) ; Li SS (Li Shu-Shen) ; Xia JB (Xia Jian-Bai) |
| 刊名 | physical review b
 |
| 出版日期 | 2006 |
| 卷号 | 74期号:8页码:art.no.081201 |
| 关键词 | P-TYPE ZNO TOTAL-ENERGY CALCULATIONS WAVE BASIS-SET II-VI ROOM-TEMPERATURE THIN-FILMS SEMICONDUCTORS FABRICATION DEFECTS DEVICES |
| ISSN号 | 1098-0121 |
| 通讯作者 | li, j, natl renewable energy lab, golden, co 80401 usa. |
| 中文摘要 | p-type doping is a great challenge for the full utilization of zno as short-wavelength optoelectronic material. due to a large electronegative characteristic of oxygen, the ionization energy of acceptors in zno is usually too high. by analyzing the defect wave-function character, we propose several approaches to lower the acceptor ionization energy by codoping acceptors with donor or isovalent atoms. using the first-principles band-structure method, we show that the acceptor transition energies of v-zn-o-o can be reduced by introducing f-o next to v-zn to reduce electronic potential, whereas the acceptor transition energy of n-o-nzn(zn) (n=1-4) can be reduced if we replace zn by isovalent mg or be to reduce the anion and cation kinetic p-d repulsion, as well as the electronic potential. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10408]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li J ,Wei SH ,Li SS ,et al. Design of shallow acceptors in ZnO: First-principles band-structure calculations[J]. physical review b,2006,74(8):art.no.081201. |
| APA | Li J ,Wei SH ,Li SS ,&Xia JB .(2006).Design of shallow acceptors in ZnO: First-principles band-structure calculations.physical review b,74(8),art.no.081201. |
| MLA | Li J ,et al."Design of shallow acceptors in ZnO: First-principles band-structure calculations".physical review b 74.8(2006):art.no.081201. |
入库方式： OAI收割
来源：半导体研究所
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