中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
GaAs absorber grown at low temperature used in passively Q-switched diode pumped solid state laser

文献类型:期刊论文

作者Wang YG (Wang Yonggang) ; Ma XY (Ma Xiaoyu) ; Wang CL (Wang Cuiluan) ; Lin T (Lin Tao) ; Zhen K (Zhen Kai) ; Wang J (Wang Jun) ; Zhong L (Zhong Li) ; Jia YL (Jia YuLei) ; Wei ZY (Wei ZhiYi)
刊名optica applicata
出版日期2006
卷号36期号:1页码:23-28
关键词GaAs low temperature Q-switch Nd : YVO4 laser YAG
ISSN号0078-5466
通讯作者wang, yg, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: chinawygxjw@163.com
中文摘要we report, for the first time to the best of our knowledge, on a passively q-switched nd:yvo4 laser with a gaas absorber grown at low temperature (lt) by metal organic vapor phase expitaxy. using the lt gaas absorber as well as an output coupler, a passively q-switched laser whose pulse duration is as short as 90 ns, was obtained.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10412]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wang YG ,Ma XY ,Wang CL ,et al. GaAs absorber grown at low temperature used in passively Q-switched diode pumped solid state laser[J]. optica applicata,2006,36(1):23-28.
APA Wang YG .,Ma XY .,Wang CL .,Lin T .,Zhen K .,...&Wei ZY .(2006).GaAs absorber grown at low temperature used in passively Q-switched diode pumped solid state laser.optica applicata,36(1),23-28.
MLA Wang YG ,et al."GaAs absorber grown at low temperature used in passively Q-switched diode pumped solid state laser".optica applicata 36.1(2006):23-28.

入库方式: OAI收割

来源:半导体研究所

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