As-doped p-type ZnO films by sputtering and thermal diffusion process
文献类型：期刊论文
| 作者 | Wang P (Wang Peng) ; Chen NF (Chen Nuofu) ; Yin ZG (Yin Zhigang) ; Yang F (Yang Fei) ; Peng CT (Peng Changtao) ; Dai RX (Dai Ruixuan) ; Bai YM (Bai Yiming) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2006 |
| 卷号 | 100期号:4页码:art.no.043704 |
| 关键词 | RAY-PHOTOELECTRON-SPECTROSCOPY INAS SURFACES FABRICATION DEPOSITION LAYERS OXIDE |
| ISSN号 | 0021-8979 |
| 通讯作者 | wang, p, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: pwang@semi.ac.cn |
| 中文摘要 | as-doped p-type zno films were grown on gaas by sputtering and thermal diffusion process. hall effect measurements showed that the as-grown films were of n-type conductivity and they were converted to p-type behavior after thermal annealing. moreover, the hole concentration of as-doped p-type zno was very impressible to the oxygen ambient applied during the annealing process. in addition, the bonding state of as in the films was investigated by x-ray photoelectron spectroscopy. this study not only demonstrated an effective method for reliable and reproducible p-type zno fabrication but also helped to understand the doping mechanism of as-doped zno. (c) 2006 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10414]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang P ,Chen NF ,Yin ZG ,et al. As-doped p-type ZnO films by sputtering and thermal diffusion process[J]. journal of applied physics,2006,100(4):art.no.043704. |
| APA | Wang P .,Chen NF .,Yin ZG .,Yang F .,Peng CT .,...&Bai YM .(2006).As-doped p-type ZnO films by sputtering and thermal diffusion process.journal of applied physics,100(4),art.no.043704. |
| MLA | Wang P ,et al."As-doped p-type ZnO films by sputtering and thermal diffusion process".journal of applied physics 100.4(2006):art.no.043704. |
入库方式： OAI收割
来源：半导体研究所
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