Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes
文献类型：期刊论文
| 作者 | Li DY (Li D. Y.) ; Huang YZ (Huang Y. Z.) ; Zhu JJ (Zhu J. J.) ; Zhao DG (Zhao D. G.) ; Liu ZS (Liu Z. S.) ; Zhang SM (Zhang S. M.) ; Ye XJ (Ye X. J.) ; Chong M (Chong M.) ; Chen LH (Chen L. H.) ; Yang H (Yang H.) ; Liang JW (Liang J. W.) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2006 |
| 卷号 | 100期号:4页码:art.no.046101 |
| 关键词 | LINEWIDTH ENHANCEMENT FACTOR WAVE-GUIDE LASER GAN SUBSTRATE INDEX TEMPERATURE GAIN |
| ISSN号 | 0021-8979 |
| 通讯作者 | li, dy, chinese acad sci, inst semicond, state key lab integrated optoelect & nanooptoelec, pob 912, beijing 100083, peoples r china. e-mail: dyli@red.semi.ac.cn |
| 中文摘要 | time-resolved light-current curves, spectra, and far-field distributions of ridge structure ingan multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. results show that the thermal lensing effect clearly improves the confinement of the higher order modes. the thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. the threshold current for the higher modes decreases by about 5 ma in every 10 ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase. (c) 2006 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10416]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li DY ,Huang YZ ,Zhu JJ ,et al. Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes[J]. journal of applied physics,2006,100(4):art.no.046101. |
| APA | Li DY .,Huang YZ .,Zhu JJ .,Zhao DG .,Liu ZS .,...&Liang JW .(2006).Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes.journal of applied physics,100(4),art.no.046101. |
| MLA | Li DY ,et al."Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes".journal of applied physics 100.4(2006):art.no.046101. |
入库方式： OAI收割
来源：半导体研究所
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